Power amplification module

ABSTRACT

A power amplification module includes first and second amplifiers for first and second communication modes, a bypass line that bypasses the first or second amplifier, an input switch circuit that supplies a radio frequency signal to the first or second amplifier in accordance with a communication mode when a desired output level is equal to or greater than a reference level, and that supplies a radio frequency signal to the bypass line when the desired output level is less than the reference level, and an output switch circuit that outputs a first amplified signal from the first amplifier or a second amplified signal from the second amplifier in accordance with the communication mode when the desired output level is equal to or greater than the reference level, and that outputs a radio frequency signal output from the bypass line when the desired output level is less than the reference level.

This is a continuation of U.S. patent application Ser. No. 16/170,812 filed on Oct. 25, 2018, which is a continuation-in-part of U.S. patent application Ser. No. 15/814,883 filed on Nov. 16, 2017, which claims priority from Japanese Patent Application No. 2016-225898 filed on Nov. 21, 2016. The contents of these applications are incorporated herein by reference in their entireties.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a power amplification module.

2. Description of the Related Art

A power amplification module is used in a mobile communication device such as a cellular phone device in order to amplify the power of a radio frequency (RF) signal that is to be transmitted to a base station. In recent years, power amplification modules having configurations capable of supporting RF signals of a plurality of different communication standards (modes) have become known. For example, Japanese Unexamined Patent Application Publication No. 2016-42700 discloses a power amplifier system that includes a first block having a first power amplifier that operates in a first mode, and a second block having a second power amplifier that operates in a second mode.

When amplifying an RF signal, the output level that is required in order to transmit the RF signal to the base station differs depending on the mode or frequency band of the RF signal, for example. Regarding this point, there is a problem with the configuration disclosed in Japanese Unexamined Patent Application Publication No. 2016-42700 in that all RF signals are amplified by the power amplifiers regardless of the output levels of the RF signals, and therefore current is excessively consumed when performing power amplification.

SUMMARY OF THE INVENTION

The present invention was made in light of the above-described circumstances, and it is an object thereof to provide a power amplification module that can reduce current consumption.

A power amplification module according to a preferred embodiment of the present invention includes: a first amplifier that is used for a first communication mode; a second amplifier that is used for a second communication mode; a bypass line that bypasses the first or second amplifier; an input switch circuit that supplies a radio frequency signal to the first or second amplifier in accordance with a communication mode in a case where a desired output level is equal to or greater than a reference level, and that supplies a radio frequency signal to the bypass line in a case where the desired output level is less than the reference level; and an output switch circuit that outputs a first amplified signal output from the first amplifier or a second amplified signal output from the second amplifier in accordance with the communication mode in the case where the desired output level is equal to or greater than the reference level, and that outputs a radio frequency signal output from the bypass line in the case where the desired output level is less than the reference level.

According to the preferred embodiment of the present invention, a power amplification module can be provided that can reduce current consumption.

Other features, elements, characteristics and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments of the present invention with reference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates the configuration of a power amplification module according to a first embodiment of the present invention;

FIG. 2 illustrates the configuration of a power amplification module according to a second embodiment of the present invention;

FIG. 3 illustrates the configuration of a power amplification module according to a third embodiment of the present invention;

FIG. 4 illustrates the configuration of a power amplification module according to a fourth embodiment of the present invention;

FIG. 5 illustrates the configuration of a power amplification module according to a fifth embodiment of the present invention;

FIG. 6 illustrates the configuration of a power amplification module according to a sixth embodiment of the present invention

FIG. 7 illustrates the configuration of a power amplification module according to a seventh embodiment of the present invention;

FIG. 8 illustrates the configuration of a power amplification module according to a modification of the seventh embodiment of the present invention

FIG. 9 illustrates the configuration of a power amplification module according to a modification of the seventh embodiment of the present invention; and

FIG. 10 illustrates the configuration of a power amplification module according to a modification of the seventh embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereafter, embodiments of the present invention will be described in detail while referring to the drawings. Elements that are the same as each other will be denoted by the same symbols and repeated description thereof will be omitted.

FIG. 1 illustrates the configuration of a power amplification module 100A according to a first embodiment of the present invention. The power amplification module 100A is included in a transmission unit of a user terminal such as a cellular phone device. The transmission unit is for processing a transmission signal that is to be transmitted to a base station. In addition, although not illustrated in FIG. 1, the user terminal also includes a reception unit that is for processing a reception signal received from the base station. The transmission unit and the reception unit are provided as a single communication unit, for example.

The power amplification module 100A supports a plurality of communication standards (modes). In the example illustrated in FIG. 1, the power amplification module 100A supports a third generation mobile communication system (3G) (first communication mode) and a second generation mobile communication system (2G) (second communication mode). The communication standards supported by the power amplification module 100A are not limited to these communication standards, and the power amplification module 100A may support a fourth generation mobile communication system (4G) (first communication mode) or a fifth generation mobile communication system (5G), for example. In this embodiment, although an example is described in which the power amplification module 100A supports two communication standards, the power amplification module 100A may instead support three or more communication standards.

Furthermore, the power amplification module 100A supports a plurality of frequency bands (bands). In other words, the power amplification module 100A has a function of amplifying the powers of RF signals of a plurality of frequency bands. In the example illustrated in FIG. 1, the power amplification module 100A supports a 3G high band and a 3G low band, and a 2G high band and a 2G low band. For the 3G high band, there is band 1 (frequency band: 1920-1980 MHz) for example, and for the 3G low band, there is band 8 (frequency band: 880-915 MHz) for example. In addition, for the 2G bands, there are global system for mobile communications (GSM) (registered trademark) high and low bands. The 3G and 2G frequency bands are not limited to these bands. Furthermore, the power amplification module 100A may support uplink carrier aggregation for simultaneously transmitting a plurality of transmission signals having different frequency bands.

Next, the constituent elements of the power amplification module 100A will be described. As illustrated in FIG. 1, the power amplification module 100A includes a 3G module 110A, a 2G module 120A and a duplexer 130.

The 3G module 110A (first module) and the 2G module 120A (second module) each include two amplifications paths, namely, a high-band amplification path and a low-band amplification path. Specifically, the 3G module 110A includes a switch circuit 10A, power amplifiers 20 a and 20 b, a band-switching circuit 30, input terminals IN1 a and IN1 b, and output terminals OUT1 a and OUT1 b. The 2G module 120A includes a switch circuit 12A, power amplifiers 22 a and 22 b, matching networks 40 a and 40 b, an antenna switch 50, input terminals IN2 a and IN2 b, and an output terminal OUT. First, 3G RF signals will be described as an example.

A 3G (first communication mode) or 2G (second communication mode) high-band RF signal is supplied to the 3G module 110A via the input terminal IN1 a, and a 3G or 2G low-band RF signal is supplied to the 3G module 110A via the input terminal IN1 b.

The switch circuit 10A (input switch circuit) includes switches SW1 a and SW1 b. The switch SW1 a switches and outputs a 3G or 2G high-band RF signal supplied from the input terminal IN1 a to the power amplifier 20 a, a line L1 a or a line L3 a. Similarly, the switch SW1 b switches and outputs a 3G or 2G low-band RF signal supplied from the input terminal IN1 b to the power amplifier 20 b, a line L1 b or a line L3 b. Switching of the RF signals will be described in detail later.

The power amplifier 20 a (first amplifier) and the power amplifier 20 b (first amplifier) are amplifiers for amplifying the powers of RF signals, and are formed using transistors (amplifying elements). For example, the transistors are bipolar transistors such as a heterojunction bipolar transistors (HBTs). Alternatively, metal-oxide-semiconductor field effect transistors (MOSFETs) may be used as the transistors. Specifically, the power amplifier 20 a amplifies a high-band RF signal supplied from the switch SW1 a, and outputs an amplified signal (first amplified signal) to the band-switching circuit 30. Similarly, the power amplifier 20 b amplifies a low-band RF signal supplied from the switch SW1 b, and outputs an amplified signal (first amplified signal) to the band-switching circuit 30. The number of power amplifier stages is not limited to one, and may be two or more.

On the basis of the frequency band of an RF signal output from the power amplifier 20 a or 20 b or the line L1 a or L1 b, the band-switching circuit 30 allocates and outputs the RF signal to the duplexer 130 that handles the frequency band corresponding to the RF signal.

The duplexer 130 outputs RF signals supplied from the band-switching circuit 30 to the antenna switch 50 of the 2G module 120A. The duplexer 130 is for example formed using a low pass filter (LPF), a band pass filter (BPF) and so on. The duplexer 130 processes a reception signal received from an antenna (not illustrated).

The antenna switch 50 (output switch circuit) switches an RF signal supplied thereto in accordance with the communication mode and frequency band of the RF signal, and supplies the RF signal to the antenna via the output terminal OUT. The antenna switch 50 supplies a reception signal received by the antenna to the duplexer 130.

Next, the configuration of the switch circuit 10A used to switch an RF signal will be described by taking a case in which the RF signal is a high-band RF signal as an example. A similar configuration to that for a high-band RF signal is used for a low-band RF signal, and therefore description thereof is omitted. First, in the case where an RF signal supplied to the switch SW1 a is a 2G RF signal, the RF signal is supplied to the line L3 a (inter-module line). The line L3 a is an inter-module line that connects the output terminal OUT1 a of the 3G module 110A and the input terminal IN2 a of the 2G module 120A to each other. Therefore, the 2G RF signal is supplied to the 2G module 120A via the line L3 a. Next, in the case where the RF signal supplied to the switch SW1 a is a 3G RF signal and a desired output level (for example, the output level required to transmit the RF signal to a base station) is equal to or greater than a reference level (hereafter, also referred to as “amplification mode”), the RF signal is supplied to the power amplifier 20 a. On the other hand, in the case where the RF signal supplied to the switch SW1 a is a 3G RF signal and the desired output level is less than the reference level (hereafter, also referred to as “non-amplification mode”), the RF signal is supplied to the line L1 a (first bypass line). The line L1 a connects the switch SW1 a and the band-switching circuit 30 without passing through the power amplifier 20 a. In other words, the line L1 a is a line that bypasses the power amplifier 20 a (bypass line). An RF signal supplied to the line L1 a is supplied to the band-switching circuit 30 without being subjected to power amplification. Thus, the antenna switch 50 (output switch circuit) outputs an amplified signal obtained by an RF signal being amplified by the power amplifier 20 a in the case of the amplification mode, and outputs an RF signal that has passed along the line L1 a in the case of the non-amplification mode. Therefore, since operation of the power amplifier 20 a is halted in the case of the non-amplification mode, current consumption can be reduced.

Next, the case of a 2G RF signal will be described. A 2G high-band RF signal is supplied to the 2G module 120A via the input terminal IN2 a, and a 2G low-band RF signal is supplied to the 2G module 120A via the input terminal IN2 b.

The switch circuit 12A (input switch circuit) includes switches SW2 a and SW2 b. The switch SW2 a switches and outputs a high-band RF signal supplied from the input terminal IN2 a to the power amplifier 22 a or a line L2 a. Similarly, the switch SW2 b switches and outputs a low-band RF signal supplied from the input terminal IN2 b to the power amplifier 22 b or a line L2 b.

The power amplifiers 22 a (second amplifier) and 22 b (second amplifier) are amplifiers for amplifying the powers of RF signals, and are formed of transistors. Specifically, the power amplifier 22 a amplifies a high-band RF signal supplied from the switch SW2 a, and outputs an amplified signal (second amplified signal) to the matching network 40 a. Similarly, the power amplifier 22 b amplifies a low-band RF signal supplied from the switch SW2 b, and outputs an amplified signal (second amplified signal) to the matching network 40 b. The number of power amplifier stages is not limited to one, and may be two or more.

The matching networks 40 a and 40 b are circuits for matching impedances between the power amplifiers 22 a and 22 b and the antenna switch 50, and are formed using capacitors and inductors. In the example illustrated in FIG. 1, the matching networks 40 a and 40 b are configured as low pass filters (LPFs). The matching networks 40 a and 40 b are not limited to this configuration, and may instead be configured as band pass filters (BPFs), for example. In addition, the 3G module 110A includes the duplexer 130 instead of the matching networks 40 a and 40 b, and therefore does not need to include matching networks.

For 2G RF signals as well, similarly to as in the case of 3G RF signals, in the case where an RF signal supplied to the switch SW2 a is a 2G RF signal and the mode is the amplification mode, the RF signal is supplied to the power amplifier 22 a. On the other hand, in the case where the RF signal supplied to the switch SW2 a is a 2G RF signal and the mode is the non-amplification mode, the RF signal is supplied to the line L2 a (second bypass line). In other words, the line L2 a is a line that bypasses the power amplifier 22 a (bypass line). Thus, the antenna switch 50 outputs an amplified signal obtained by an RF signal being amplified by the power amplifier 22 a in the case of the amplification mode, and outputs an RF signal that has passed along the line L2 a in the case of the non-amplification mode. Therefore, since operation of the power amplifier 22 a is halted in the case of the non-amplification mode, current consumption can be reduced.

Due to the above-described configuration, in the power amplification module 100A, an RF signal is switched and supplied to the power amplifier 20 a, 20 b, 22 a or 22 b, or the line L1 a, L1 b, L2 a or L2 b in accordance with the desired output level of the RF signal in both the 3G module 110A and the 2G module 120A. Therefore, in the case where the desired output level of the power amplification module is less than the reference level, operation of the power amplifiers can be halted, and as a result, current consumption can be reduced.

In addition, in the power amplification module 100A, 3G and 2G high-band and low-band RF signals are supplied using the two input terminals IN1 a and IN1 b of the 3G module 110A. In other words, it is sufficient for a transmission circuit that generates an RF signal to have two output terminals, and therefore an increase in circuit scale is suppressed compared with a configuration in which an output terminal is provided for each communication mode and each frequency band.

In addition, in the power amplification module 100A, the switch circuits 10A and 12A may be formed using switch circuits mounted in a module in the configuration disclosed in Japanese Unexamined Patent Application Publication No. 2016-42700, for example. Thus, there is no need to newly add terminals to allow the switch circuits 10A and 12A to be provided, and the manufacturing cost can be suppressed.

In addition, in the case where the power amplification module 100A includes a control circuit that controls the gain of the power amplifiers, the switch circuits 10A and 12A may each have a structure in which an RF signal is supplied to the power amplifier 20 a, 20 b, 22 a or 22 b, or the line L1 a, L1 b, L2 a or L2 b on the basis of a control signal output from the control circuit. Thus, there is no need to newly add a control circuit for controlling the switch circuits 10A and 12A, and manufacturing cost can be suppressed.

Furthermore, differences in the desired output levels of RF signals may differ depending on the communication modes and frequency bands, for example. Specifically, the output power level required for a transmission signal of a cellular phone device is around minus several tens of dBm to several tens of dBm, for example.

In addition, 3G power amplifiers and 2G power amplifiers are not limited to being mounted as separate modules, and may instead be mounted as a combined module. Furthermore, an example is illustrated in FIG. 1 in which the duplexer 130 is mounted outside the 3G module 110A, but the duplexer may instead be mounted inside the 3G module. In addition, an example is illustrated in FIG. 1 in which the antenna switch 50 is mounted inside the 2G module 120A, but the antenna switch may instead be mounted outside the 2G module. The 3G module and the 2G module may be formed on a single chip.

FIG. 2 illustrates the configuration of a power amplification module 100B according to a second embodiment of the present invention. Elements that are the same as those of the power amplification module 100A are denoted by the same symbols and description thereof is omitted. In the second embodiment and embodiments thereafter, description of matters common to the first embodiment is omitted and only the points of difference are described. In particular, the same operational effects resulting from the same configurations are not repeatedly described in the individual embodiments. Compared with the configuration of the power amplification module 100A, the power amplification module 100B includes a 3G module 110B instead of the 3G module 110A, and a 2G module 120B instead of the 2G module 120A.

The power amplification module 100B differs from the power amplification module 100A illustrated in FIG. 1 in that both 3G and 2G RF signals are supplied to the 2G module 120B. Specifically, in the power amplification module 100B, a 3G or 2G high-band RF signal is supplied to the input terminal IN2 a of the 2G module 120B, and a 3G or 2G low-band RF signal is supplied to the input terminal IN2 b of the 2G module 120B.

The 3G module 110B and the 2G module 120B respectively include switch circuits 10B and 12B instead of the switch circuits 10A and 12A. The switch circuit 10B includes switches SW3 a and SW3 b. Similarly to the switches SW2 a and SW2 b of the switch circuit 12A illustrated in FIG. 1, the switches SW3 a and SW3 b respectively switch and output 3G RF signals supplied from the input terminals IN1 a and IN1 b to the power amplifier 20 a or 20 b, or the line L1 a or L1 b. In addition, the switch circuit 12B includes switches SW4 a and SW4 b. Similarly to the switches SW1 a and SW1 b of the switch circuit 10A illustrated in FIG. 1, the switches SW4 a and SW4 b respectively switch and output 3G or 2G RF signals supplied from the input terminals IN2 a and IN2 b to the power amplifier 22 a or 22 b, the line L2 a or L2 b, or the line L4 a or L4 b. Similarly to the lines L3 a and L3 b illustrated in FIG. 1, the lines L4 a and L4 b are inter-module lines that respectively connect an output terminal OUT2 a of the 2G module 120B and the input terminal IN1 a of the 3G module 110B, and an output terminal OUT2 b of the 2G module 120B and the input terminal IN1 b of the 3G module 110B.

With this configuration as well, in accordance with the desired output level, the power amplification module 100B can supply an RF signal to the power amplifier 20 a, 20 b, 22 a or 22 b in the case of the amplification mode, and can supply an RF signal to the line L1 a, L1 b, L2 a or L2 b in the case of the non-amplification mode. Therefore, the power amplification module 100B can achieve the same effect as the power amplification module 100A.

FIG. 3 illustrates the configuration of a power amplification module 100C according to a third embodiment of the present invention. Elements that are the same as those of the power amplification module 100A are denoted by the same symbols and description thereof is omitted. Compared with the configuration of the power amplification module 100B, the power amplification module 100C includes a 3G module 110C instead of the 3G module 110B.

Compared with the 3G module 110B, the 3G module 110C does not include the switch circuit 10B and the lines L1 a and L1 b. In other words, in the power amplification module 100C, the 3G module 110C does not include lines that bypass power amplifiers, and instead, the lines L2 a and L2 b of the 2G module 120B are shared by 3G and 2G RF signals. Specifically, 3G RF signals that are supplied to the input terminals IN2 a and IN2 b of the 2G module 120B are respectively supplied to the 3G module 110C via the lines L4 a and L4 b in the case of the amplification mode, and are respectively supplied to the lines L2 a and L2 b of the 2G module 120B in the case of the non-amplification mode. The processing of the 2G RF signals is the same as the processing performed in the power amplification module 100B illustrated in FIG. 2, and therefore detailed description thereof is omitted.

With this configuration as well, in accordance with the desired output level, the power amplification module 100C can supply an RF signal to the power amplifier 20 a, 20 b, 22 a or 22 b in the case of the amplification mode, and can supply an RF signal to the line L2 a or L2 b in the case of the non-amplification mode. Therefore, the power amplification module 100C can achieve the same effect as the power amplification module 100A.

In addition, in the power amplification module 100C, a 3G RF signal is supplied to the antenna switch 50 without passing through the band-switching circuit 30 and the duplexer 130 in the case of the non-amplification mode. Thus, compared with the configuration illustrated in FIG. 2, attenuation of an RF signal caused by the RF signal passing through the band-switching circuit 30 and the duplexer 130 (for example, on the order of several dB) can be suppressed. Therefore, the power amplification module 100C can further reduce current consumption in the case of the non-amplification mode compared with the power amplification modules 100A and 100B. Here, when a 3G RF signal is output from the output terminal OUT without passing through the duplexer 130, there is a possibility that a shaping level of the signal waveform of the 3G RF signal will be degraded compared with the power amplification modules 100A and 100B. However, since the output power is small in the case of the non-amplification mode compared with the case of the non-amplification mode, it can be said that the effect of the degradation of the shaping level will be small in transmission of an RF signal.

FIG. 4 illustrates the configuration of a power amplification module 100D according to a fourth embodiment of the present invention. Elements that are the same as those of the power amplification module 100A are denoted by the same symbols and description thereof is omitted. Compared with the configuration of the power amplification module 100A, the power amplification module 100D includes a 3G module 110D instead of the 3G module 110A, and a 2G module 120C instead of the 2G module 120A.

The power amplification module 100D differs from the power amplification module 100A illustrated in FIG. 1 in that the 3G RF signals are supplied to the 3G module 110D, and the 2G RF signals are supplied to the 2G module 120C. Specifically, in the power amplification module 100D, the 3G RF signals are supplied to an input terminal IN3 of the 3G module 110D, and the 2G RF signals are supplied to an input terminal IN4 of the 2G module 120C.

The 3G module 110D includes a switch circuit 10C, which is provided with a switch SW5, instead of the switch circuit 10A. In addition, the 3G module 110D includes a line L5 that bypasses the power amplifiers 20 a and 20 b (bypass line) instead of the lines L1 a and L1 b. Similarly, the 2G module 120C includes a switch circuit 12C, which is provided with a switch SW6, instead of the switch circuit 12A. In addition, the 2G module 120C includes a line L6 that bypasses the power amplifiers 22 a and 22 b (bypass line) instead of the lines L2 a and L2 b.

Regardless of whether a 3G RF signal supplied from the input terminal IN3 is a high-band RF signal or a low-band RF signal, the switch SW5 supplies the RF signal to the power amplifiers 20 a and 20 b in the case of the amplification mode, and supplies the RF signal to the line L5 in the case of the non-amplification mode. Thus, compared with the 3G module 110A illustrated in FIG. 1, the number of lines that bypass power amplifiers can be reduced by one. Although an RF signal may be supplied to both the high-band power amplifier 20 a and the low-band power amplifier 20 b regardless of the frequency band of the RF signal in the case of the amplification mode, alternatively, the power amplifier on the side corresponding to the frequency band of the RF signal may be switched on and the power amplifier on the side not corresponding to the frequency band of the RF signal may be switched off in the case of the amplification mode. The processing of the RF signals in the 2G module 120C is the same as the processing of the RF signals in the 3G module 110D, and therefore detailed description thereof is omitted.

With this configuration as well, in accordance with the desired output level, the power amplification module 100D can supply an RF signal to the power amplifier 20 a, 20 b, 22 a or 22 b in the case of the amplification mode, and can supply an RF signal to the line L5 or L6 in the case of the non-amplification mode. Therefore, the power amplification module 100D can achieve the same effect as the power amplification module 100A.

In addition, as illustrated in FIG. 4, in this embodiment, the antenna switch 50 is mounted in the 2G module 120C. Thus, the antenna switch 50 may be mounted in the 2G module 120C.

FIG. 5 illustrates the configuration of a power amplification module 100E according to a fifth embodiment of the present invention. Elements that are the same as those of the power amplification module 100A are denoted by the same symbols and description thereof is omitted. Compared with the configuration of the power amplification module 100A, the power amplification module 100E includes a 3G/4G module 110E instead of the 3G module 110A, and a 2G module 120D instead of the 2G module 120A.

The 3G/4G module 110E is equipped with three amplification paths, namely, a 3G/4G high-band path, a 3G/4G low-band path, and a 3G/4G very-low-band path. Specifically, compared with the 3G module 110A illustrated in FIG. 1, the 3G/4G module 110E includes a switch circuit 10D instead of the switch circuit 10A, and further includes a power amplifier 20 c. In addition, the 2G module 120D is not equipped with a low-band amplification path, and includes a switch circuit 12D instead of the switch circuit 12A. The term “very low band” refers to a band containing frequencies lower than those of the low band, and may be band 12 (frequency band: 699-716 MHz), for example.

The switch circuit 10D includes a switch SW1 a and a switch SW1 c. The switch SW1 c switches and outputs a 3G or 4G low-band or very-low-band RF signal supplied from the input terminal IN1 b to the power amplifier 20 b or 20 c, or to the line L1 b. The power amplifier 20 c (first amplifier) amplifies a very-low-band RF signal supplied from the switch SW1 c, and outputs an amplified signal (first amplified signal) to the band-switching circuit 30.

With this configuration as well, in accordance with the desired output level, the power amplification module 100E can supply a very-low-band RF signal to the power amplifier 20 c in the case of the amplification mode, and can supply a very-low-band RF signal to the line L1 b in the case of the non-amplification mode. Therefore, the power amplification module 100E can achieve the same effect as the power amplification module 100A.

In addition, compared with the 2G module 120A illustrated in FIG. 1, the 2G module 120D is not equipped with a low-band amplification path. Thus, a 3G/4G module or a 2G module is not limited to having two amplification paths, and may instead have one, or three or more amplification paths.

In addition, as illustrated in FIG. 5, the line L1 b that bypasses power amplifiers may be shared by RF signals of a plurality of bands, or a dedicated line may be provided for each band.

FIG. 6 illustrates the configuration of a power amplification module 100F according to a sixth embodiment of the present invention. Elements that are the same as those of the power amplification module 100A are denoted by the same symbols and description thereof is omitted. Compared with the configuration of the power amplification module 100E illustrated in FIG. 5, the power amplification module 100F includes a 3G/4G module 110F instead of the 3G/4G module 110E, and includes a 2G module 120E instead of the 2G module 120D.

Similarly to the 3G/4G module 110E, the 3G/4G module 110F is equipped with three amplification paths, namely, a 3G/4G high-band path, a 3G/4G low-band path, and a 3G/4G very-low-band path. Specifically, compared with the 3G/4G module 110E illustrated in FIG. 5, the 3G/4G module 110F includes a switch circuit 10E instead of the switch circuit 10D. The switch circuit 10E includes a switch SW3 a and a switch SW1 d. In the case where an RF signal supplied from the input terminal IN1 b is a 2G RF signal, the switch SW1 d supplies the RF signal to the line L3 b, and in the case where the RF signal supplied from the input terminal IN1 b is a 3G or 4G RF signal, the switch SW1 d switches and outputs the RF signal to the power amplifier 20 b or 20 c, or the line L1 b.

Furthermore, the 2G module 120E includes a low-band amplification path instead of the high-band amplification path illustrated in FIG. 5, and includes a switch circuit 12E instead of the switch circuit 12D. The switch circuit 12E includes a switch SW2 b. Thus, the amplification path of a 2G module may be a high-band path or a low-band path.

With this configuration as well, in accordance with the desired output level, the power amplification module 100F can supply a very-low-band RF signal to the power amplifier 20 c in the case of the amplification mode, and can supply a very-low-band RF signal to the line L1 b in the case of the non-amplification mode. Therefore, the power amplification module 100F can achieve the same effect as the power amplification module 100A.

FIG. 7 illustrates a power amplification module 100G according to a seventh embodiment of the present invention. The power amplification module 100G has a configuration in which a fifth generation cellular phone power amplifier system and fourth, third, and second generation cellular phone power amplifier systems are grouped together. Hereafter, the configurations of these respective power amplification modules will be described. The power amplification module 100G includes a 2G/3G/4G module 120F, a 2G/3G/4G module 110G, a 5G module 130A, two diplexers 90 a and 90 b, and four output ports OUT1, OUT2, OUT3, OUT4. The number of output ports is not limited to four and may be less than or greater than four. Although not illustrated, low-noise amplifiers may be built into the power amplification modules.

The 2G/3G/4G module 120F includes a low band (e.g., 600-1000 MHz) second generation power amplifier 22 b, a low band (e.g., 600-1000 MHz) third generation/fourth generation power amplifier 20 b, an input switch 12F, a low pass filter 40 b, a band-switching switch 30 d, a duplexer 130 d, an antenna switch 50 b, a line L7 a, and a line L7 b.

A 2G transmission path is formed in which the power amplifier 22 b, the low pass filter 40 b, and the antenna switch 50 b are sequentially connected to each other after the input switch 12F. A 3G/4G transmission path is formed in which the power amplifier 20 b, the band-switching switch 30 d, the duplexer 130 d, and the antenna switch 50 b are sequentially connected to each other after the input switch 12F.

The input switch 12F switches an input from an input port to the power amplifier 22 b or the line L7 a in accordance with a power mode. The input switch 12F also switches an input from an input port to the power amplifier 20 b or the line L7 b in accordance with a power mode. In the case where the desired output level is equal to or greater than a reference level, an inputted RF signal is supplied to power amplifier 22 b or 20 b, whereas in the case where the desired output level is less than the reference level, the RF signal is supplied to line L7 a or L7 b. Thus, operation of a power amplifier can be halted in the case where the output level is less than the reference level. Therefore, current consumption of the 2G/3G/4G module 120F can be reduced. As illustrated, the input switch 12F is configured to have two inputs and four outputs, but is not limited to this configuration.

The 2G/3G/4G module 110G similarly includes a 3G/4G power amplifier 20 e that supports a middle band (e.g., 1500-2000 MHz), 2G and 36/4g power amplifiers 20 a and 22 a that support a high band (e.g., 2000-2500 MHz), a 3G/4G power amplifier 20 d that supports an ultra-high band (e.g., 2500-3500 MHz), an input switch 10F, band-switching switches 30 a, 30 b, and 30 c, duplexers 130 a, 130 b, and 130 c, a low pass filter 40 a, an antenna switch 50 a, and lines L8 a, L8 b, L8 c, and L8 d.

A 2G transmission path is formed in which the power amplifier 22 a, the low pass filter 40 a, and the antenna switch 50 a are sequentially connected to each other after the input switch 10F. A middle band 3G/4G transmission path is formed in which the power amplifier 20 e, the band-switching switch 30 c, the duplexer 130 c, and the antenna switch 50 a are sequentially connected to each other after the input switch 10F. An ultra-high band 3G/4G transmission path is formed in which the power amplifier 20 d, the band-switching switch 30 b, the duplexer 130 b, and the antenna switch 50 a are sequentially connected to each other after the input switch 10F. A high band 3G/4G transmission path is formed in which the power amplifier 20 a, the band-switching switch 30 a, the duplexer 130 a, and the antenna switch 50 a are sequentially connected to each other after the input switch 10F.

The input switch 10F switches an input from an input port to the power amplifier 20 a or the line L8 a in accordance with a power mode. The input switch 10F switches an input from an input port to the power amplifier 20 d or the line L8 b in accordance with a power mode. The input switch 10F switches an input from an input port to the power amplifier 20 e or the line L8 c in accordance with a power mode. The input switch 10F switches an input from an input port to the power amplifier 22 a and the line L8 d in accordance with a power mode. In the case where the desired output level is equal to or greater than a reference level, an inputted RF signal is supplied to the power amplifier 20 a, 20 d, 20 e, or 22 a, whereas in the case where the desired output level is less than the reference level, the RF signal is supplied to line L8 a, L8 b, L8 c, or L8 d. Thus, operation of a power amplifier can be halted in the case where the output level is less than the reference level. Therefore, current consumption of the 2G/3G/4G module 110G can be reduced. As illustrated, the input switch 10F is configured to have four inputs and eight outputs, but is not limited to this configuration.

The 5G module 130A similarly includes power amplifiers 23 a and 23 b that support frequency bands for a fifth generation cellular phone communication system (e.g., equal to and/or less than 6 GHz), an input switch 13F, transmission/reception switching switches 31 a and 31 b, band pass filters 40 c and 40 d, mode-switching switches 80 a and 80 b, directional couplers 60 a and 60 b, and sounding reference signal (SRS) switches 70 a and 70 b. An SRS switch is a switch that monitors the communication quality of individual antennas and switches connection to the monitored antenna having the best communication quality among the individual antennas. As illustrated, the SRS switches are configured to have one input and two outputs, but are not limited to this configuration, and may instead be configured to have a plurality of inputs and a plurality of outputs. Although not illustrated, SRS switches may also be used when selecting the reception path of a reception antenna, regardless of a connected antenna (e.g., when not switching between transmission antennas).

The 5G module 130A may be a time division duplex (TDD) system, and include the band pass filters 40 c and 40 d and the transmission/reception switching switches 31 a and 31 b, as shown, instead of duplexers.

A 5G transmission path is formed in which the power amplifier 23 a, the transmission/reception switching switch 31 a, the band pass filter 40 c, the mode-switching switch 80 a, the directional coupler 60 a, and the SRS switch 70 a are sequentially connected to each other after the input switch 13F. Another 5G transmission path is formed in which the power amplifier 23 b, the transmission/reception switching switch 31 b, the band pass filter 40 d, the mode-switching switch 80 b, the directional coupler 60 b, and the SRS switch 70 b are sequentially connected to each other after the input switch 13F.

The input switch 13F switches an input from an input port to the power amplifier 23 a or a line H1 a in accordance with a power mode. The input switch 13F switches an input from an input port to the power amplifier 23 b or a line H1 b in accordance with a power mode. In the case where the desired output level is equal to or greater than a reference level, an inputted RF signal is supplied to power amplifier 23 a or 23 b, whereas in the case where the desired output level is less than the reference level, the RF signal is supplied to line H1 a or H1 b. Thus, operation of a power amplifier can be halted in the case where the output level is less than the reference level. Therefore the current consumption of the 5G module 130A can be reduced. As illustrated, the input switch 13F is configured to have two inputs and four outputs, but is not limited to this configuration.

FIG. 8 illustrates a power amplification module 100H according to a modification of the seventh embodiment of the present invention. The power amplification module 100H differs from the power amplification module 100G illustrated in FIG. 7 in terms of the constituent elements constituting the modules. The 2G/3G/4G module 110G and the 2G/3G/4G module 120F illustrated in FIG. 7 are implemented as a single 2G/3G/4G module 110H and the input switch 10F and the input switch 12F are implemented as a single input switch 14F.

FIG. 9 illustrates a power amplification module 100J according to a modification of the seventh embodiment of the present invention. The power amplification module 100J differs from the power amplification module 100G illustrated in FIG. 7 in terms of the configurations of the lines and input switches. According to the modification of FIG. 9, a 5G module 130B is formed by integrating the line H1 a and the line H1 b of the 5G module 130A to form a line H1 c. A 2G/3G/4G module 110J is formed by integrating the line L8 a, the line L8 b, the line L8 c, and the line L8 d of the 2G/3G/4G module 110G to form a line L8 e, a line L8 f, and a line L8 g, and changing the input switch 10F to that shown as input switch 10G. A 2G/3G/4G module 120G is formed by integrating the line L7 a and the line L7 b of the 2G/3G/4G module 120F to form a line L7 c.

In the power amplification module 100J, the number of bypass lines is reduced compared with the power amplification module 100G, and therefore bypassing can be realized without the need for complex control. In addition, as a result of the number of bypass lines being reduced and the configurations of the switches being simplified, the size of the switches can be reduced and an the size of the module can be limited while reducing the current consumption of the power amplification module.

FIG. 10 illustrates a power amplification module 100K according to a modification of the seventh embodiment of the present invention. The power amplification module 100K is obtained by additionally providing low-noise amplifiers 28 a and 28 b, and switches 90 a and 90 b, line H1 c, and line H1 d inside the 5G module 130C. The transmission/reception switching switch 31 a and the mode-switching switch 80 a are connected to each other, and the mode-switching switch 80 a supplies a reception signal to the low-noise amplifier 28 a or supplies a reception signal to a line H1 a in accordance with the mode. Similarly, the transmission/reception switching switch 31 b and the mode-switching switch 80 b are connected to each other, and the mode-switching switch 80 b supplies a reception signal to the low-noise amplifier 28 b or supplies a reception signal to a line H1 b in accordance with the mode.

According to the 5G module 130C, a bypass path is provided for a reception path as well. Switch 90 a supplies the reception signal from transmission/reception switch 31 a to low-noise amplifier 95 a when a desired reception level is equal to or less than a reference level, and supplies the reception signal to line H1 c when the reception level is greater than the reference level. Switch 90 b supplies the reception signal from transmission/reception switch 31 b to low-noise amplifier 95 b when a desired reception level is equal to or less than a reference level, and supplies the reception signal to line H1 d when the reception level is greater than the reference level. As a result of this configuration, operation of a low-noise amplifier can be halted not only in the case of transmission, and therefore the current consumption of a reception circuit can be reduced. Power consumption of the 5G module 130C can be reduced.

In order to facilitate size reduction, a transmission/reception switching switch, a mode-switching switch, and a low-noise amplifier may be integrated into a single chip inside one integrated circuit, and the overall size of the module can be reduced by adopting such a configuration.

The configurations illustrated in FIGS. 7 to 10 are embodiments and are not intended to be limiting. A low-noise amplifier and a path for bypassing the low-noise amplifier may be incorporated into the individual 2G/3G/4G modules.

Exemplary embodiments of the present invention have been described above. The power amplification modules 100A to 100F include 3G or 4G power amplifiers 20 a, 20 b and 20 c, 2G power amplifiers 22 a and 22 b, and lines L1 a, L1 b, L2 a, L2 b, L5 and L6 that bypass the power amplifiers, and in the case where a desired output level is equal to or higher than a reference level, the power amplification modules supply a RF signal to a power amplifier, and in the case where the desired output level is less than the reference level, the power amplification modules supply the RF signal to a line. Thus, operation of the power amplifiers can be halted in the case where the output level is less than the reference level. Therefore, current consumption of the power amplification modules can be reduced.

Furthermore, the configurations of the lines included in the power amplification modules 100A to 100F are not particularly limited, and 3G lines L1 a, L1 b and L5 and 2G lines L2 a, L2 b and L6 may be included, for example.

In addition, the power amplification modules 100A, 100B, 100D, 100E and 100F may include the duplexer 130 that is supplied with an amplified signal output from the power amplifier 20 a, 20 b or 20 c, or an RF signal output from the line L1 a, L1 b or L5. The power amplification modules are not limited to these configurations.

In addition, the power amplification modules 100A, 100E and 100F respectively include a 3G module 110A, and 3G/4G modules 110E and 110F, and 2G modules 120A, 120D and 120E, and a 2G RF signal is supplied to the 2G module via the line L3 a or L3 b after being supplied to the 3G module or the 3G/4G module. Thus, 4G, 3G and 2G high-band and low-band RF signals are supplied using two input terminals IN1 a and IN1 b of a 3G module. Therefore, it is sufficient for a transmission circuit that generates an RF signal to have two output terminals, and an increase in circuit scale is suppressed compared with a configuration in which an output terminal is provided for each communication mode and each frequency band.

In addition, the power amplification module 100C includes the 3G module 110C and the 2G module 120B, and a 3G RF signal is supplied to the line L2 a or L2 b of the 2G module in the case where the desired output level is less than the reference level. Thus, compared with the configurations of the power amplification modules 100A, 100B, 100D, 100E and 100F, attenuation of an RF signal caused by the RF signal passing through the band-switching circuit 30 and the duplexer 130 can be suppressed. Therefore, current consumption of the power amplification module can be further reduced in the case where the desired output level is less than the reference level.

In addition, the power amplification modules 100A to 100F may have a structure in which an RF signal is supplied to a power amplifier or a line on the basis of a control signal output from a control circuit that controls the gains of the power amplifiers. Thus, there is no need to newly add a control circuit for controlling the switch circuits 10A to 10E and 12A to 12E, and manufacturing cost can be suppressed. The power amplification modules are not limited to these configurations.

In addition, the power amplification modules 100A to 100F may include a 3G or 4G mode as a first communication mode, and a 2G mode as a second communication mode. The communication modes supported by the power amplification module are not limited to these modes.

The purpose of the embodiments described above is to enable easy understanding of the present invention, and the embodiments are not to be interpreted as limiting the present invention. The present invention can be modified or improved without departing from the gist of the invention, and equivalents to the present invention are also included in the present invention. In other words, appropriate design changes made to the embodiments by those skilled in the art are included in the scope of the present invention so long as the changes have the characteristics of the present invention. For example, the elements included in the embodiments and the arrangements, materials, conditions, shapes, sizes and so forth of the elements are not limited to those exemplified in the embodiments and can be appropriately changed. In addition, each embodiment is merely an illustrative example and it goes without saying that parts of the configurations illustrated in different embodiments can be substituted for each other or combined with each other and these new configurations are also included in the scope of the present invention so long as the configurations have the characteristics of the present invention.

While preferred embodiments of the invention have been described above, it is to be understood that variations and modifications will be apparent to those skilled in the art without departing from the scope and spirit of the invention. The scope of the invention, therefore, is to be determined solely by the following claims. 

1. A power amplification module comprising: a first amplifier configured to amplify a radio frequency (RF) signal according to a first communication mode; a third amplifier configured to amplify the RF signal according to a third communication mode; a first bypass line that bypasses the first or third amplifier; an input switch circuit configured to supply the RF signal to the first or third amplifier in accordance with the first or third communication mode when a desired output level is equal to or greater than a reference level, and configured to supply the RF signal to the bypass line when the desired output level is less than the reference level; and an output switch circuit configured to output a first amplified signal from the first amplifier, or a third amplified signal from the third amplifier in accordance with the first or third communication mode when the desired output level is equal to or greater than the reference level, and configured to output the RF signal output from the bypass line when the desired output level is less than the reference level, wherein the third communication mode is a 5G mode.
 2. The power amplification module according to claim 1, further comprising: a low-noise amplifier; and a reception bypass line that bypasses the low-noise amplifier, wherein the output switch circuit is further configured to supply a reception signal to the low-noise amplifier in accordance with the first or third communication mode when a desired reception level is equal to or less than a second reference level, and configured to supply the reception signal to the reception bypass line when the desired reception level is greater than the second reference level.
 3. The power amplification module according to claim 1, further comprising a second bypass line, wherein when the desired output level is less than the reference level: the input switch is configured to supply the RF signal to the first bypass line when the RF signal corresponds to the first communication mode, and configured to supply the RF signal to the second bypass line when the RF signal corresponds to the third communication mode, and the output switch circuit is further configured to output the RF signal output from the first or second bypass line.
 4. The power amplification module according to claim 2, further comprising a second bypass line, wherein when the desired output level is less than the reference level: the input switch is configured to supply the RF signal to the first bypass line when the RF signal corresponds to the first communication mode, and configured to supply the RF signal to the second bypass line when the RF signal corresponds to the third communication mode, and the output switch circuit is further configured to output the RF signal output from the first or second bypass line.
 5. The power amplification module according to claim 3, further comprising: a duplexer configured to supply the first amplified signal output from the first amplifier or the RF signal output from the first bypass line to the output switch circuit.
 6. The power amplification module according to claim 4, further comprising: a duplexer configured to supply the first amplified signal output from the first amplifier or the RF signal output from the first bypass line to the output switch circuit.
 7. The power amplification module according to claim 1, wherein the first communication mode is a 2G mode, a 3G mode, or a 4G mode.
 8. The power amplification module according to claim 2, wherein the first communication mode is a 2G mode, a 3G mode, or a 4G mode.
 9. The power amplification module according to claim 3, wherein the first communication mode is a 2G mode, a 3G mode, or a 4G mode.
 10. The power amplification module according to claim 1, wherein the third amplifier is mounted as a separate module than the first amplifier.
 11. The power amplification module according to claim 2, wherein the third amplifier and the low-noise amplifier are together mounted as a module that is separate from the first amplifier. 